A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• Grenoble, France 10.3762/bjnano.9.184 Abstract In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the

• mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometre resolution; Introduction The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization

• , differential Hall effect (DHE) profiling [17][18] can potentially meet all the requirements related to the precise measurement of dopant activation at the semiconductor surface. DHE relies on the iteration of etching process and conventional Hall effect measurements. The active carrier profile is therefore